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FDD8424H _F085
Dual N & P-Channel PowerTrench ? MOSFET
N-Channel: 40V, 20A, 24m ? P-Channel: -40V, -20A, 54m ?
October 200 8
tm
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement
mode Power
Max r DS(on) = 24m ? at V GS = 10V, I D = 9.0A
Max r DS(on) = 30m ? at V GS = 4.5V, I D = 7.0A
Q2: P-Channel
Max r DS(on) = 54m ? at V GS = -10V, I D = -6.5A
Max r DS(on) = 70m ? at V GS = -4.5V, I D = -5.6A
Fast switching speed
Qualified to AEC Q101
RoHS Compliant
MOSFETs are produced using Fairchild Semiconductor ’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
Inverter
H-Bridge
D1/D2
D1
D2
G2
S2
G1
S1
G1
S1
G2
S2
Dual DPAK 4L
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
N-Channel
P-Channel
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package Limited)
Parameter
Q1
40
±20
20
Q2
-40
±20
-20
Units
V
V
I D
- Continuous (Silicon Limited)
- Continuous
- Pulsed
T C = 25°C
T A = 25°C
26
9.0
55
-20
-6.5
-40
A
P D
E AS
T J , T STG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
T C = 25°C (Note 1)
T A = 25°C (Note 1a)
T A = 25°C (Note 1b)
(Note 3)
30 35
3.1
1.3
29 33
-55 to +150
W
mJ
°C
Thermal Characteristics
R θ JC
R θ JC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
(Note 1)
4.1
3.5
°C/W
Package Marking and Ordering Information
Device Marking
FDD8424H
Device
FDD8424H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
?200 8 Fairchild Semiconductor Corporation
FDD8424H_F085 Rev. A
1
www.fairchildsemi.com
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